Two-dimensional (2D) electronics beyond graphene represents a cutting-edge frontier in the field of nanotechnology, promising to revolutionize the landscape of electronic devices. While graphene, with its extraordinary conductivity and mechanical properties, has long been at the forefront of 2D materials research, scientists are now delving into a diverse array of materials to push the boundaries further. Beyond graphene, materials like transition metal dichalcogenides (TMDs), phosphorene, and hexagonal boron nitride (h-BN) have emerged as promising candidates for next-generation electronic applications. TMDs, for instance, offer a tunable bandgap, allowing for the creation of field-effect transistors with unprecedented control over electronic properties. Phosphorene, a single layer of black phosphorus, exhibits anisotropic electrical behavior and a thickness-dependent bandgap, adding versatility to electronic design. Moreover, h-BN serves as an excellent insulator, facilitating the integration of 2D materials into heterostructures with enhanced performance. The quest for 2D electronics beyond graphene is driven by the pursuit of materials that not only complement graphene's strengths but also address its limitations, such as lacking an inherent bandgap. Researchers are exploring novel synthesis methods, precise manipulation techniques, and innovative device architectures to unlock the full potential of these materials. The development of advanced 2D electronics holds the promise of ushering in a new era of ultra-compact, energy-efficient, and high-performance electronic devices, with applications spanning from flexible electronics to quantum computing. As scientists continue to unravel the unique properties of diverse 2D materials, the field is poised for exciting breakthroughs that could reshape the future of electronics.
Title : Circumventing challenges in developing CVD graphene on steels for extraordinary and durable corrosion resistance
Raman Singh, Monash University, Australia
Title : Evaluating cytotoxicity of metal-doped tin oxide nanoparticles
Paulo Cesar De Morais, Catholic University of Brasilia, Brazil
Title : Nanotechnology and polymers for sea and ocean sterilization using artificial intelligence with artificial intelligence-engineered nano-polymer membranes
Fadi Ibrahim Ahmed, Al-shujaa bin Al-aslam School, Kuwait
Title : Dual memory characteristics and crystallographic transformations in shape memory alloys
Osman Adiguzel, Firat University, Turkey
Title : Flexible fabric-based nanostructured color-generating film systems
Xinhua Ni, Guangzhou City University of Technology, China
Title : A broadband, angle-insensitive aluminium-based near infra-red absorber for protecting warfighters and sensitive optics technologies
Chayanika Baishya, Indian Institute of Technology Guwahati, India