In recent years, 2D materials have emerged as revolutionary components in the semiconductor industry, paving the way for unprecedented advancements in electronic devices. Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, stands out as a prominent example. Its exceptional electrical conductivity, high thermal conductivity, and mechanical strength make it an ideal candidate for enhancing the performance of semiconductor devices. Researchers are exploring innovative ways to integrate graphene into transistors, interconnects, and other crucial elements of electronic circuits. Additionally, other 2D materials, such as transition metal dichalcogenides (TMDs) and black phosphorus, exhibit unique electronic properties that offer novel opportunities for semiconductor applications. These materials enable the development of ultra-thin, flexible, and energy-efficient electronic components, addressing the increasing demand for miniaturization and improved performance in the semiconductor industry.
Beyond their electrical attributes, 2D materials bring transformative advantages to semiconductor manufacturing processes. The thin and flexible nature of these materials allows for easier integration into existing semiconductor fabrication technologies. Engineers can leverage their compatibility with conventional fabrication methods, facilitating the scalable production of 2D-material-based semiconductor devices. Furthermore, the atomically thin nature of 2D materials opens up possibilities for creating transistors and other semiconductor components with unprecedented precision and control at the atomic level. As the semiconductor industry continues to push the boundaries of Moore's Law, 2D materials are poised to play a pivotal role in shaping the next generation of electronic devices, offering a pathway to overcome the limitations of traditional materials and drive innovation in semiconductor technology.
Title : Circumventing challenges in developing CVD graphene on steels for extraordinary and durable corrosion resistance
Raman Singh, Monash University, Australia
Title : Evaluating cytotoxicity of metal-doped tin oxide nanoparticles
Paulo Cesar De Morais, Catholic University of Brasilia, Brazil
Title : Nanotechnology and polymers for sea and ocean sterilization using artificial intelligence with artificial intelligence-engineered nano-polymer membranes
Fadi Ibrahim Ahmed, Al-shujaa bin Al-aslam School, Kuwait
Title : Dual memory characteristics and crystallographic transformations in shape memory alloys
Osman Adiguzel, Firat University, Turkey
Title : Flexible fabric-based nanostructured color-generating film systems
Xinhua Ni, Guangzhou City University of Technology, China
Title : A broadband, angle-insensitive aluminium-based near infra-red absorber for protecting warfighters and sensitive optics technologies
Chayanika Baishya, Indian Institute of Technology Guwahati, India